The continuing miniaturization of semiconductor device and integrated circuits(IC)requires printing of ever smaller critical dimensions.Extreme ultraviolet lithography(EUVL)is one of the five next generation lithography technology candidates which is targeted to enter into production for 70nm critical dimensions and below.In this paper,extreme ultraviolet lithography technique is analyzed from the aspects of extreme ultraviolet light source,extreme ultraviolet optical system,reflective mask,resist,stepper,its application prospect is also analyzed briefly.