A Review on Synthesis, Structure, Properties, and Film Capacitor Applications of Poly(4-methyl-1-pentene) and Derived Materials

Under the trend of high-temperature development in power electronic devices, polymer-based film materials for commercial capacitors face a core bottleneck: when the operating temperature exceeds 85°C, their performance degrades significantly, limiting their application under working conditions. Poly(4-methyl-pentene) (PMP), which has a dielectric constant similar to that of commercial capacitor base film materials, also boasts a high melting point (236 °C) and superior dielectric loss (less than 0.0001 at 1 MHz), showing great potential to break through the technical barriers of high-temperature capacitors. Despite its significant advantages in basic performance, PMP is constrained by ultra-thin film formation technology ( <10 μm), high oxygen permeability, and complex synthesis processes, leading to delayed practical applications. This paper systematically reviews the synthesis techniques, crystal structure, dielectric properties, and application progress of PMP materials in capacitors. By integrating research on synthesis, structure, performance, and application, this study aims to provide theoretical support for material design, process optimization, and performance enhancement of PMP-based high-temperature capacitors, promoting their practical use in harsh environments.