Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.