Development of GaN Monolithic Integrated Circuits for Power Conversion

This paper describes the development of a viable platform for the design of full GaN (Gallium Nitride) monolithic integrated circuits for power conversion applications. The Normally-on and normally-off AlGaN/GaN power HEMT devices are used for the integrated circuit design using the ADS (Advanced Design System) tool. A monolithic switched-mode DC-DC buck converter with integrated functional blocks and over-current protection is used to showcase the suitability of the development. The designed GaN power integrated circuit was fully fabricated and tested to verify its functionality in power conversion.