材料科学
电介质
兴奋剂
锆
居里温度
钡
介电损耗
锌
晶体结构
铁电性
钙钛矿(结构)
分析化学(期刊)
矿物学
化学工程
结晶学
冶金
铁磁性
光电子学
凝聚态物理
物理
工程类
化学
色谱法
作者
Xingbing Liu,Xiaoling Deng,Kaihua Liu,Wei Cai,Chunlin Fu
标识
DOI:10.1080/10584587.2014.874258
摘要
Abstract The Zn-doped Ba(Zr0.2Ti0.8)O3 (BZT) films were prepared by sol-gel processing on Pt/Ti/SiO2/Si substrates. The crystal structures, surface morphology, dielectric properties of Zn-doped BZT films were investigated as a function of Zn content. It is found that the films belong to the perovskite structure. In addition, the dielectric constant decreases at first and then increases with the increasing of Zn content, but the dielectric loss decreases with the increasing of Zn content at room temperature. Finally, it also can be found that the Curie temperature of the Zn-doped BZT films is lower than that of the pure BZT films. Keywords: Barium zirconium titanatefilmszincdielectric propertiesdoping
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