Optical Modulation of the Signal in Total Internal Reflection Light Modulator Utilizing Bismuth Silicon Oxide

Utilizing the high photoconductivity of bismuth silicon oxide, we fabricated a total internal reflection light modulator in which optical modulation of the signal is possible. The modulation is implemented by photoconductive collapse of the electric field distribution surrounding a given electrode pair, which results in reduced diffraction efficiency. We discuss the operational characteristics of the resulting optical modulation.