P.6: An Integrated a‐Si:H Gate Driver Circuit Design for Large‐sized TFT‐ LCD Applications

Abstract A novel hydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) integrated gate driver circuit with 33% ac‐driving structure is presented. The proposed circuit diminishes the threshold voltage (V TH ) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the V TH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac‐driving structure, and the gate driver can stably operate over 240‐h driving at high temperature (60 °C).