Low temperature wafer bonding for MEMS processes and 3D integration
作者
Roy Knechtel
标识
DOI:10.1109/ltb-3d.2012.6238097
摘要
In this paper different wafer bonding processes for completely processed MEMS and CMOS wafers will be introduced and discussed. Low temperature direct bonding, anodic bonding, glass frit bonding and metal compressive bonding can fulfill the requirements for a bonding technique operating at low temperatures and with high quality.