Electroless deposition on copper substrates and characterization of thin films of copper (I) selenide

Cuprous selenide films are prepared by reacting oxide free copper metal with selenous acid at room temperature (22°C). The formation of Cu(I) oxide is avoided by degassing the bath with argon. From the X-ray diffractograms (XRD) and electron probe microanalysis (EPMA) of such films it can be concluded that copper deficient, orthorhombic Cu(I) selenide is formed.