材料科学
光电探测器
光电子学
光电二极管
电致变色
串联
实现(概率)
多路复用
双极扩散
图像传感器
计算机科学
光学
电子工程
电极
物理
电子
工程类
复合材料
数学
统计
量子力学
作者
Young Jin Choi,Sae Byeok Jo,Jeong Ho Cho
标识
DOI:10.1002/adma.202102725
摘要
Abstract Optical data acquisition has been set as one of the milestones to testify the developments aimed at harnessing the full potential of the spatial and temporal data processing capabilities of the advanced semiconductor technology. A highly promising approach to drive the level of acquisition beyond the current technological node is the vertical integration of multiple photodetectors. However, vertical integration so far requires the same level of circuit complexity as lateral integration from the incapability of monolithic integration. Here, an electrochromic device architecture is introduced that enables realization of a monolithic tandem multicolor photodetector. The device, composed of vertically stacked p‐type and n‐type graphene barristors, is demonstrated to be capable of regulating the balanced charge transport under any desired illumination wavelengths. It exhibits variable anti‐ambipolar charge transport behavior, which yields sensitive voltage‐controlled photoconductive gain spectra. These electrical behaviors are utilized to fabricate an optoelectronic logic sensor that can demultiplex the desired color coordinate or wavelength in the constituent array with high color accuracy.
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