Optimization of a 4H-SiC Schottky diode using TCAD software

Silicon Carbide (SiC) Schottky diode is simulated using Silvaco TCAD. Five different metals, Aluminum (Al), Platinum (Pt), Palladium (Pd), Nickel (Ni), and Molybdenum (Mo), used for Schottky contact and diode parameters such as ideality factor, barrier height, turn-on voltage is studied. The forward current density and breakdown voltage of the Schottky diode is studied with thickness and doping density of n-type 4H-SiC semiconductor. Doping density varied from 1 × 1014 cm−3 to 9 × 1014 cm−3, and epi-layer thickness varied from 10 µm to 50 µm. By varying doping concentration, thickness, and metal contact, an optimized Schottky diode is obtained for high-speed switching applications.