Atomic Layer Etching and its Characteristic

Atomic layer etching (ALE) is most advanced etching technique for removing thin layer of material at the atomic level using sequential reaction steps that are self limiting. ALE is thousand times faster as compared of approaches like Reactive ion etching (RIE) & others. ALE with thermal technique, the researchers fabricated 3-D transistors that are as narrow as 2.5 nanometers and more efficient than their commercial counterparts. Consider the etching approaches and their limitations of RIE and others. As part of this review paper, a characteristic of ALE and their scope for various material etching in current era. Keyword: Atomic layer etching (ALE), Reactive ion etching (RIE), Plasma etching and Electron Cyclotron Resonance (ECR)