极紫外光刻
抵抗
极端紫外线
忠诚
缩放比例
高保真
材料科学
计算机科学
纳米技术
光电子学
电子工程
光学
物理
工程类
电信
电气工程
数学
几何学
激光器
图层(电子)
作者
Liesbeth Reijnen,P. Choi,Mu Feng,Chris Spence,Stijn Schoofs,Carlos Fonseca,Shinya Morikita,Kiyohito Ito,Shota Yoshimura,Fumiko Yamashita,K Kaushik,Kyohei Koike,Hidetami Yaegashi,Vadim Timoshkov,Mark J. Maslow,Tae Kwon Jee
摘要
Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi-patterning (LELELE) for via hole patterning with 193-i. It induced local pattern fidelity error such like CDU, CER, Pattern placement error. Exactly, EUV must be desirable scaling-driving tool, however, specific technical issue, named RLS (Resolution-LER-Sensitivity) triangle, obvious remaining issue. In this work, we examined hole patterning sensitizing (Lower dose approach) utilizing hole patterning restoration technique named "CD-Healing" as post-Litho. treatment.
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