材料科学
带隙
兴奋剂
光电子学
电阻率和电导率
铟
薄膜
电子迁移率
氧化镉
宽禁带半导体
纳米技术
冶金
电气工程
工程类
镉
作者
Yeonbae Lee,Chao Ping Liu,K. M. Yu,W. Walukiewicz
标识
DOI:10.1002/ente.201700641
摘要
Abstract CdO‐based transparent conducting oxide thin films have great potential applications in many optoelectronic devices because of their high mobility, low resistivity, and high transparency over a wide spectral range. However, because of the low band gap of only 2.2 eV, the transparency of this material is limited in the UV spectral range. Alloying of undoped CdO with a larger band gap material such as MgO increases the band gap but tends to degrade electrical conductivity. Recently, it has been demonstrated that In doping of CdO greatly improves the electrical characteristic of this material by increasing both the carrier density and the mobility. In this work, we present a comprehensive study on CdMgO alloys doped with up to 4 % In. We show that the doping with In extends the composition range of conducting films with a composition of up to 40 % of Mg and a band gap of 3.5 eV. Our results could open up a new pathway to transparent conducive oxides that could be used as low‐resistivity contacts and UV‐transparent electron emitter windows in thin‐film photovoltaic technologies.
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