材料科学
兴奋剂
电子迁移率
光电子学
二极管
纳米电子学
半导体
石墨烯
电子
纳米技术
物理
量子力学
作者
Yi‐Jun Xu,Jian Yuan,Kai Zhang,Yuanjun Hou,Qiu Sun,Yingming Yao,Shaojuan Li,Qiaoliang Bao,Han Zhang,Yuegang Zhang
标识
DOI:10.1002/adfm.201702211
摘要
Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K + center of the silicon nitride (Si x N y ). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si x N y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm 2 V –1 s –1 . Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10 4 . And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.
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