A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

The overall growing trend towards electrification and, at the same time, the urgent need to minimize energy consumption strongly requires higher energy efficiency in power electronics. We present a new technology concept for next generation 1200 V IGBTs with vastly reduced overall power losses using an optimized micro-pattern trench (MPT) cell design with sub-micron mesas. Further important parameters relevant for inverters driving electrical machines were optimized, including turn-off softness, dv/dt-controllability, and short circuit capability, providing a right-fit solution to customer requirements.