Effect of Mg content and buffer layer on properties of ZnMgO: Ga thin films

To solve the problem on ZnO applied in flexible opt-electronic devices,transparent conducting ZnO: Ga and Zn1-xMgxO∶Ga films were deposited on flexible Polyethylene Terephthalate(PET) substrates by Pulsed Laser Deposition.XRD,SEM,Hall effect measurement,and UV-VIS-IR spectrophotometer were used to characterize the films,and the structural,electrical and optical properties of the films with different Mg concentration were studied.Then the method of buffer layer pre-deposition was used to improve the performance of the films.The results show that the ZnO-based transparent conducting thin films were obtained on flexible substrate by PLD method,and the structural,electrical properties of the films were obviously improved by buffer layer pre-deposition.The lowest electrical resistivity of the films we prepared is 8.27×10-4Ω·cm and the transmittance is more than 70% in the visible region.