Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films

HAZO films were prepared on quartz substrates by RF magnetron sputtering in Ar+H2 gas ambient at room temperature.The effects of post-annealing in pure Ar atmosphere on the structural,optical and electrical properties of the HAZO films were investigated.It was found that post-annealing treatment was beneficial to crystallization of HAZO thin films,while caused a large degradation of the conductivity.The increase in the resistivity of HAZO thin films was attributed to the doped hydrogen atoms diffuse out after annealing.It was showed that interstitial hydrogen atoms(Hi) and substitutional hydrogen atoms(HO) at an O site removed from films,as well as the effect of H passivating deep acceptors and dangling bonds gradually eliminated as the heating temperature was increased.