New BST-based Ceramics for High Voltage Capacitors

Nb5+、Mg2+ were doped into Ba0.9Sr0.1TiO3 to improve the breakdown performance. Results show that when Ti4+ is co-replaced by Nb5+ and Mg2+, Curie temperature of Ba0.9Sr0.1TiO3 moved to lower temperature, dielectric pick became more flatten and breakdown electrical field(Eb)is promoted. High voltage ceramics with er=1 053,Eb=13 MV/m, tanδ=0.01,ρv 1 010 ?·cm are obtained for Ba0.9Sr0.1(Nb2/3Mg1/3)0.04Ti0.96O3 sintered at 1 320℃.