期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2020-01-01卷期号:: 1-1被引量:17
标识
DOI:10.1109/led.2020.2995446
摘要
We predict spontaneous polarization of ε-Ga 2 O 3 can achieve a high density of 1014 cm -2 two-dimensional electron gas (2DEG) at the interface of ε-Ga 2 O 3 and m-AlN (m-GaN) without doping. Based on the accurately calculated bandgap alignment of ε-Ga 2 O 3 , AlN and GaN, we find that the critical thickness of the ε-Ga2O3 to form a mobile 2DEG at the interface on m-AlN and m-GaN substrates is around 1.8 nm, which is much thinner than AlGaN due to its large potential shift. The depletion mode high-electron-mobility transistors (HEMTs) based on ε-Ga 2 O 3 are also investigated. The results show that the saturation currents of ε-Ga 2 O 3 HEMTs devices are much larger than that of typical AlGaN HEMTs. For the emerging problem of large leakage current from ε-Ga 2 O 3 HEMTs device, we present a novel method that can significantly suppress the off-state leakage current of the device by growing an ultrathin AlGaN layer on the top surface of ε-Ga 2 O 3 . Therefore, our results can provide a theoretical basis for the potential applications of ε-Ga 2 O 3 in fabricating HEMTs for high-power and high-frequency applications.