材料科学
激光阈值
脉冲激光沉积
光致发光
随机激光器
光电子学
激光器
紫外线
扫描电子显微镜
沉积(地质)
溅射
薄膜
光学
纳米技术
复合材料
生物
古生物学
物理
沉积物
波长
作者
Yong Xu,Yunpeng Liu,Lu Jin,Xiangyang Ma,Deren Yang
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2013-01-01
卷期号:62 (8): 084207-084207
被引量:6
标识
DOI:10.7498/aps.62.084207
摘要
ZnO films on silicon substrates are prepared by reactive sputtering and pulsed laser deposition, respectively. Their crystallinities, surface morphologies and photoluminescence actions are characterized using X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy correspondingly. Furthermore, the electrically pumped random laser actions of the two metal-insulator-semiconductor structured devices based on the sputtered and pulse laser deposition ZnO films respectively are comparatively investigated. It is found that the device fabricated using the pulse laser deposition ZnO film possesses a much lower threshold current for random lasing and higher output optical power. This is due to the fact that the pulse laser deposition ZnO film has much fewer defects, leading to remarkably lower optical loss during the multiple scattering within such a ZnO film.
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