材料科学
光电子学
晶体管
双极扩散
MOSFET
半导体
纳米技术
场效应晶体管
电压
电气工程
物理
等离子体
工程类
量子力学
作者
Qiuhui Li,Lin Xu,Shiqi Liu,Jie Yang,Shibo Fang,Ying Li,Jiachen Ma,Zhiyong Zhang,Ruge Quhe,Jinbo Yang,Jing Lü
标识
DOI:10.1002/adts.202000252
摘要
Abstract The emerging two‐dimensional (2D) tellurium (tellurene) has attracted much attention due to its high carrier transportability and prominent air stability. Micrometer‐scale bilayer (BL) tellurene field‐effect transistors (FETs) are successfully fabricated with a large on/off current ratio of about 10 5 . Here, the transport properties of both the n‐ and p‐type double‐gated sub‐10 nm BL tellurene metal‐oxide‐semiconductor FETs (MOSFETs) are systematically explored by using ab initio quantum transport simulation. The optimized 5, 7, and 9 nm gate‐length p‐type x ‐ and y ‐directed BL tellurene MOSFETs with a proper underlap and negative capacitance dielectric can meet or nearly meet the on‐state current, delay time, power dissipation, and energy‐delay product requirements of the International Technology Roadmap for Semiconductors for the 2022–2028 horizons for high‐performance applications. This renders BL tellurene to join the air‐stable channel candidate for the p‐type sub‐10 nm transistors.
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