Ambipolar Field‐Effect Transistor Based on CH3NH3PbI3 Microwires

Abstract Organic‐inorganic hybrid perovskites are promising semiconductors for high‐performance field‐effect transistors because of their excellent charge carrier transport, but hybrid perovskites used in field‐effect transistors are not diverse enough and the field‐effect performances are always not satisfactory at room temperature and in the dark and air. Herein, we prepared CH 3 NH 3 PbI 3 microwires through a transformation from CH 3 NH 3 PbI 3 bulk single crystals and fabricated ambipolar field‐effect transistors based on them. At room temperature and in the dark and air, the field‐effect mobility can reach to 1.8×10 −3 cm 2 V −1 s −1 , which is two orders of magnitude higher than that of CH 3 NH 3 PbI 3 polycrystalline film based field‐effect transistors under the same condition, indicating that CH 3 NH 3 PbI 3 microwires have potential for use in ambipolar transistors.