电阻随机存取存储器
钙钛矿(结构)
记忆电阻器
卤化物
材料科学
非易失性存储器
瓶颈
光电子学
纳米技术
可靠性(半导体)
计算机科学
工程物理
电气工程
化学
嵌入式系统
物理
工程类
电压
无机化学
量子力学
功率(物理)
结晶学
作者
Kaijin Kang,Wei Hu,Xiaosheng Tang
标识
DOI:10.1021/acs.jpclett.1c03408
摘要
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.
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