Modeling of a vertical tunneling transistor based on Gr-hBN- χ 3 borophene heterostructure

We present a computational study on the electrical behavior of the field-effect transistor based on vertical graphene-hBN-χ3 borophene heterostructure and vertical graphene nanoribbon-hBN-χ3 borophene nanoribbon heterostructure. We use nonequilibrium the Green function formalism along with an atomistic tight-binding (TB) model. The TB parameters are calculated by fitting tight-binding band structure and first-principle results. Also, electrical characteristics of the device, such as ION/IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the increase of the hBN layer number decreases subthreshold swing and degrades the intrinsic gate-delay time. The device allows current modulation 177 at room temperature for a 1.2 V gate-source bias voltage.