功勋
电压
CMOS芯片
电压降
电压调节器
电容器
电气工程
跌落电压
低压差调节器
控制理论(社会学)
电子工程
计算机科学
物理
工程类
光电子学
控制(管理)
人工智能
作者
Somnath Kundu,Muqing Liu,Shi-Jie Wen,Richard Wong,Chris H. Kim
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2018-10-01
卷期号:54 (1): 109-120
被引量:74
标识
DOI:10.1109/jssc.2018.2870558
摘要
This paper proposes a fully integrated digital low-dropout (DLDO) regulator using a beat-frequency (BF) quantizer implemented in a 65-nm low power (LP) CMOS technology. A time-based approach, replacing the conventional voltage quantizer by a pair of voltage-controlled oscillator and a time quantizer, makes the design highly digital. A D-flip-flop is utilized as a BF generator, which is used as the sampling clock for the DLDO. The variable sampling frequency in the BF DLDO can achieve fast response, LP consumption, and excellent stability at the same time. In addition to that, the DLDO has a built-in active voltage positioning (AVP) for lower peak-to-peak voltage deviation during load step. The load capacitor is only 40 pF, and the total core area of the DLDO is 0.0374 mm 2 . A 50-mA step in load current produces a voltage droop of 108 mV, which is recovered in 1.24 μs. It can operate for a wide input voltage from 0.6 to 1.2 V while generating a 0.4-1.1-V output for a maximum load current of 100 mA. The peak current efficiency is 99.5% and the figure of merit (FOM) is 1.38 ps.
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