Nanowire Field‐Effect Transistors

The fundamental principle of the field effect transistor (FET) is the control of channel charge dynamics by the gate electric field. In this chapter, the authors review the evolution of different FET architectures in the light of the same fundamental principle. Design considerations and fabrication details of the nanowire family of FETs based on physical requirements of highest electrostatic control and current drive are discussed. A broad overview of the state-of-the-art nanowire FET characteristics is also presented.