铌酸锂
多路复用器
材料科学
硅
光电子学
光学
集成光学
薄膜
硅光子学
多路复用
电子工程
物理
工程类
纳米技术
作者
Qingyun Li,Houbin Zhu,Fan Yang,Youtian Hu,Yujie Ma,Huangpu Han,Bin He,Shuangchen Ruan,Peigang Han,Bingxi Xiang
标识
DOI:10.1109/jlt.2025.3557415
摘要
The hybridization of mono-crystalline silicon and lithium niobate thin films (Si-LNOI) combines the remarkable electrical properties and mature micro-nano processing technologies of Si, as well as the excellent optical properties of LN, which provides a new material platform for integrated photonics. Mode (de)multiplexers is one of the key passive components in photonic integrated circuits, and can significantly improve the transmission capacity. In this study, four-channel mode (de)multiplexer was demonstrated on Si-LNOI, which was based on cascade asymmetrical directional coupler structure along the Y-axis of LN (for various applications access the large electric-optic coefficient and χ(2)nonlinear-optical coefficient). At 1500–1600 nm, the fabricated mode (de)multiplexer had a low excess loss (EL) of less than 1.5 dB and a low inter-modal crosstalk (CT) of less than -13.6 dB. The clear eye diagrams at 14 Gbps demonstrated excellent data communication capability of mode (de)multiplexer. This study provides guidelines for the development of multimode photonics on Si-LNOI.
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