可积系统
电解质
二进制数
材料科学
晶体管
光电子学
纳米技术
电压
电极
电气工程
化学
数学
工程类
物理化学
纯数学
算术
作者
Jiyun Lee,Jae Hoon Lee,Hyeonsu Bang,Tae Woong Yoon,Jong Hwan Ko,Boseok Kang
出处
期刊:Materials horizons
[Royal Society of Chemistry]
日期:2025-01-01
卷期号:12 (14): 5331-5341
摘要
The limitations of traditional von Neumann architectures have driven interest in organic mixed ionic-electronic conductors (OMIECs) for integrating memory and computation. Organic electrochemical synaptic transistors (OESTs) are particularly promising for emulating biological synaptic behaviors because they offer low power consumption, flexibility, and scalability. One-shot integrable electropolymerization (OSIEP) has emerged as a promising approach for fabricating OESTs owing to its simplicity and integrative capabilities. However, OSIEP-fabricated devices often exhibit inferior memory characteristics, largely due to suboptimal control of channel crystallinity-a key factor influencing memory retention. In this study, we addressed this challenge by fabricating poly(3,4-ethylenedioxythiphene) (PEDOT)-based OESTs using a mixed binary supporting electrolyte via the OSIEP method. A binary system comprising tetrabutylammonium tetrafluoroborate (BF4-) and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (TFSI-) was adopted to balance crystallinity and ionic conductivity. PEDOT:Blend films achieved enhanced synaptic functionality by combining the high de-doping efficiency and charge transport of PEDOT:BF4 with the superior molecular orientation of PEDOT:TFSI. This synergistic approach significantly improved the long-term depression/potentiation characteristics and prolonged memory retention. PEDOT:Blend-based synaptic transistors achieved a recognition accuracy of 95.58% on the MNIST dataset, surpassing devices fabricated with single electrolytes. These findings highlight a scalable strategy for tuning the synaptic properties in OMIEC-based devices, thereby advancing their potential for neuromorphic computing applications.
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