异质结
金属
材料科学
Atom(片上系统)
氮化碳
碳原子
氮化物
Boosting(机器学习)
碳纤维
光电子学
纳米技术
化学
光催化
计算机科学
复合数
冶金
复合材料
并行计算
机器学习
催化作用
有机化学
生物化学
图层(电子)
烷基
作者
Chentao Zhu,Kang Zhong,Bingbing Zhu,Shuting Li,Huaming Li,Jinman Yang,Hui Xu
标识
DOI:10.1016/j.apcatb.2025.125200
摘要
The construction of S-scheme heterojunction can effectively retain higher oxidation and reduction potentials within a compound semiconductor system, exhibiting significant potential in photogenerated carrier separation. Herein, Bi 2 MoO 6 (BMO) nanosheets were grown in - situ on bulk hm-C 4 N 3 (hm-CN) by a one-step hydrothermal method , creating an extremely tight S-scheme heterojunction interface. This interface accelerates the photogenerated electron migration from BMO to hm-CN and inhibits photogenerated electron-hole complexation. DFT calculations confirm that S-scheme heterojunction exhibits the mechanism of charge density modulation for hm-CN, with more electrons enrich on the central C atom. Meanwhile, the energy barrier for photocatalytic CO 2 reduction is reduced from 0.82 eV to 0.59 eV. Consequently, the optimized BMO/CN-150 photocatalyst exhibits the highest performance enhancement in CO 2 photoreduction to CO and CH 4 , which is 14.5 times (CO) and 16.1 times (CH 4 ) of the hm-CN monomer and maintains exception stability over 24 h. This study provides an effective strategy to utilize the charge transfer interaction between heterojunctions to precisely modulate the charge density of a certain component and thus design efficient artificial photosynthesis catalysts. The in - situ growth method is utilized to construct a tight S-scheme heterojunction between hm-C 4 N 3 and Bi 2 MoO 6 for facilitating photogenerated charge separation, and the enrichment of electrons in the central carbon atom of hm-C 4 N 3 lowers the reaction energy barrier. • Bi 2 MoO 6 nanosheets grown in - situ on hm-C 4 N 3 to form a tight S-scheme heterojunction. • Bi 2 MoO 6 /hm-C 4 N 3 S-scheme heterojunction promotes charge separation and inhibits photogenerated carrier recombination. • Photogenerated electrons are enriched at the central carbon atom of hm-C 4 N 3 , lowering the CO generation energy barrier.
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