材料科学
极紫外光刻
激光器
光学
扫描电子显微镜
波长
极端紫外线
拉曼光谱
透射电子显微镜
光谱学
紫外线
显微镜
光电子学
纳米技术
物理
量子力学
复合材料
作者
Haojie An,Jinshi Wang,Huaiyu Cui,Fengzhou Fang
出处
期刊:Optics Express
[The Optical Society]
日期:2023-04-24
卷期号:31 (10): 15438-15438
被引量:1
摘要
This paper presents an experimental study on the laser-induced atomic and close-to-atomic scale (ACS) structure of 4H-SiC using a capillary-discharged extreme ultraviolet (EUV) pulse of 46.9 nm wavelength. The modification mechanism at the ACS is investigated through molecular dynamics (MD) simulations. The irradiated surface is measured via scanning electron microscopy and atomic force microscopy. The possible changes in the crystalline structure are investigated using Raman spectroscopy and scanning transmission electron microscopy. The results show that the stripe-like structure is formed due to the uneven energy distribution of a beam. The laser-induced periodic surface structure at the ACS is first presented. The detected periodic surface structures with a peak-to-peak height of only 0.4 nm show periods of 190, 380, and 760 nm, which are approximately 4, 8, and 16 times the wavelength. In addition, no lattice damage is detected in the laser-affected zone. The study shows that the EUV pulse is a potential approach for the ACS manufacturing of semiconductors.
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