极紫外光刻
光源
计算机科学
光学
材料科学
光电子学
物理
作者
Atsushi Ueda,Fumio Iwamoto,Yoshifumi Ueno,Shinji Nagai,Kenichi Miyao,Hideyuki Hayashi,Takuya Ishii,Tamotsu Abe,Hiroaki Nakarai,Takashi Saitou
摘要
Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. This light source uses a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H2 buffer-gas flow. During 1500 hours of continuous operation, a brightness of 120W/mm2sr at the plasma point, a stable EUV energy 3σ-value below 5% and a high availability of 99% have been obtained without reflectivity degradation of the EUV collector mirror. We are currently developing key components for higher repetition rate to further increase the brightness.
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