Large magnetostriction in γʹ-Fe4N single-crystal thin film

An Fe4N(1 1 0) single-crystal film of 50 nm thickness with γʹ phase is prepared through hetero-epitaxial growth on an MgO(1 1 0) single-crystal substrate at 400 °C by reactive sputtering. The out-of-plane and in-plane lattice constants agree with those of bulk within small differences less than 0.2% and the orientation dispersions are about 1.2°. The degree of N site ordering in Fe4N structure is estimated to be 0.995. The arithmetical mean surface roughness is as small as 0.3 nm. These data show that a high-quality Fe4N single-crystal film is successfully formed. The Fe4N film shows in-plane magnetic anisotropy with the easy magnetization direction parallel to [0 0 1] and with the hard direction parallel to [1_11], which is reflecting the positive magnetocrystalline anisotropy, K1. A large negative λ100 value of –40 × 10–6 and a fairly-large positive λ111 value of +150 × 10–6 are observed. The present study has shown that γʹ-Fe4N compound is one of the strong candidates for rare-metal-free magnetostrictive materials.