记忆电阻器
神经形态工程学
长时程增强
材料科学
光电子学
突触
退火(玻璃)
突触重量
突触可塑性
重置(财务)
纳米技术
计算机科学
生物医学工程
神经科学
电子工程
化学
受体
心理学
人工智能
复合材料
医学
工程类
人工神经网络
生物化学
金融经济学
经济
作者
Debashis Panda,Arpan Acharya,Cheng‐Yao Lo
标识
DOI:10.1021/acsaelm.4c01943
摘要
A flexible ITO/ZnO/TiOx/ITO memristor has been confirmed to be a suitable candidate for nociceptors by demonstrating all of the typical nociceptive characteristics. The annealing effect on the memristor synapse is explored using different annealing time variants of the invisible (above 90% transparency in the visible region) device. The 10 min annealed device is found to be a suitable one for its bipolar nonvolatile gradual switching with over 3000 cycles of endurance and >104 s of retention. Device-to-device uniformity and reproducibility have been achieved with a narrow distribution of set, reset, and forming voltages. Synaptic behaviors like long-term potentiation and depression for 800 cycles with nearly linear potentiation-depression nonlinearity (Np/Nd = 3/0.3), as well as short-term plasticity, make it capable of neuromorphic computing applications.
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