Pressure-induced structural stability, metallization and optoelectronic properties of transition metal chalcogenide BaTiS 3

The pressure effects on the structural stability, metallization and optoelectronic properties of transition metal chalcogenide BaTiS3 are investigated by performing ab-initio calculations. Our calculations show that BaTiS3 has a hexagonal structure at ambient pressure, which matches well with the available experimental values. As pressure increases, a transition from hexagonal to orthorhombic phase occurs at around 10.8 GPa. The band structure and density of states of hexagonal BaTiS3 have been calculated and analysed. Moreover, the effect of pressure on the optical properties has been studied in terms of dielectric function as well as absorption coefficient, reflectivity and extinction coefficient. The application of hydrostatic pressure has shifted the maximum absorption toward the visible range, revealing that hexagonal BaTiS3 can be used for high pressure optoelectronic applications.