电阻随机存取存储器
冯·诺依曼建筑
内存处理
瓶颈
计算机科学
计算机体系结构
建筑
计算
记忆电阻器
内存体系结构
非常规计算
内存计算
嵌入式系统
计算机存储器
分布式计算
半导体存储器
计算机硬件
工程类
电气工程
交错存储器
操作系统
艺术
搜索引擎
视觉艺术
Web搜索查询
电压
按示例查询
情报检索
算法
作者
Chenyu Wang,Ge Shi,Fei Qiao,Rubin Lin,Shien Wu,Zenan Hu
出处
期刊:Nanoscale advances
[Royal Society of Chemistry]
日期:2023-01-01
卷期号:5 (6): 1559-1573
被引量:3
摘要
The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit. The dominant system architecture is the von Neumann architecture, with the processing and storage units working independently. The data migrate between them via buses, reducing computing speed and increasing energy loss. Research is underway to increase computing power, such as developing new chips and adopting new system architectures. Computing-in-memory (CIM) technology allows data to be computed directly on the memory, changing the current computation-centric architecture and designing a new storage-centric architecture. Resistive random access memory (RRAM) is one of the advanced memories which has appeared in recent years. RRAM can change its resistance with electrical signals at both ends, and the state will be preserved after power-down. It has potential in logic computing, neural networks, brain-like computing, and fused technology of sense-storage-computing. These advanced technologies promise to break the performance bottleneck of traditional architectures and dramatically increase computing power. This paper introduces the basic concepts of computing-in-memory technology and the principle and applications of RRAM and finally gives a conclusion about these new technologies.
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