Epitaxy of wafer-scale bilayer MoS2 thin film for P-N diodes

The large-scale fabrication of P-N diodes based on atomically thin two-dimensional transition-metal dichalcogenide (2D TMD) has potential application in integrated circuit of semiconductor industry. However, the mobility of emerging monolayer TMD such as MoS₂ was severely degraded by phonon scattering, and fabrication of P-type field effective transistors (FETs) through controllable doping still remains challenging. Recently, two works published in Nature have reported uniform nucleation growth of bilayer MoS₂ thin film on c-plane sapphire and fabrication of P-type FETs by evaporating high work function metals as device electrodes. The reported two works provide new strategies to optimize the growth of wafer-scale TMD thin film and fabrication of P-type FETs, which may accelerate the development of future electronics.