材料科学
硅
纳米晶硅
单晶硅
异质结
非晶硅
光电子学
聚合物太阳能电池
晶体硅
太阳能电池
作者
Zhaoqing Sun,Zhaoqing Sun,Jingjie Li,Shenghou Zhou,Liang Fang,Xixiang Xu,Shuai Wu,Zilong Zheng,Xiaoqing Chen,Hui Yan,Haiyun Yao,Yongzhe Zhang
标识
DOI:10.1002/pssa.202300758
摘要
Improving power conversion efficiency (PCE) in photovoltaics has driven innovative approaches in solar cell design and technology. Silicon heterojunction (SHJ) solar cells exhibit advantages in PCE due to their effective passivating contact structures. SHJ–interdigitated back contact (SHJ–IBC) solar cells have the potential to surpass traditional SHJ cells, attributed to their advantage in short‐circuit current ( J SC ). Herein, Silvaco Atlas technology computer‐aided design is used to create digital twins of high‐efficiency SHJ solar cells with amorphous silicon and nanocrystalline silicon hole selective contact (HSC) layers. Using parameters from digital twins of SHJ solar cells, the practical efficiency limit of SHJ–IBC solar cells is assessed. The results show that SHJ–IBC cells can achieve potential efficiencies of 27.01% with amorphous HSC and 27.38% with nanocrystalline HSC. Further efficiency augmentation to 27.51% can be achieved by narrowing the gap from 80 to 20 μm. This study not only advances comprehension of SHJ–IBC solar cells but also provides insights into optimizing geometrical configurations for improved performance. The utilization of digital twins provides a valuable tool for predicting and evaluating the performance of SHJ–IBC solar cells, contributing substantively to the ongoing development of high‐efficiency photovoltaic technology.
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