欧姆接触
电阻率和电导率
材料科学
退火(玻璃)
接触电阻
肖特基势垒
兴奋剂
宽禁带半导体
光电子学
分析化学(期刊)
化学
图层(电子)
纳米技术
冶金
电气工程
二极管
色谱法
工程类
作者
Chuying Tang,Caixia Fu,Yang Jiang,Minghao He,Chenkai Deng,Kangyao Wen,Jiaqi He,Peiran Wang,Fangzhou Du,Yi Zhang,Qiongzheng Hu,Nick Tao,Qing Wang,HongYu Yu
摘要
In this work, the carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN with a very low specific contact resistivity of 1.98 × 10−5 Ω cm2 is investigated. Secondary ion mass spectroscopy measurement results show that the Mg concentration near the p-GaN surface increases form 8 × 1019 to 7 × 1020/cm3 for Mg/Pt/Au contact after annealing. It indicates that Mg atoms from the Mg/Pt/Au metal stack diffuse into the p-GaN during annealing, forming a heavily Mg doped p++-GaN layer with a depth of about 3 nm. The sheet resistance Rsh depends on temperature for Mg/Pt/Au contacts on p-GaN/GaN, indicating that the influence of 2DHG on carrier transport mechanisms at the metal/p-GaN interface was eliminated. For Mg/Pt/Au contacts at ≥360 K, specific contact resistivity reasonably follows T−1, which indicates that the band conduction of Schottky theory dominates the carrier transport. For Mg/Pt/Au contacts at 200–360 K, the electrical resistivity reasonably follows T−1/4, indicating variable-range hopping (VRH) conduction through Mg-related deep-level defects (DLD). Based on the VRH conduction model, the effective barrier height (qφ) of the Mg-related DLD band is extracted as 0.265 eV, which well matches the excellent Ohmic contact.
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