噻吩
轨道能级差
聚合物
缩聚物
共轭体系
苯
Stille反应
高分子化学
退火(玻璃)
薄膜晶体管
化学
有机半导体
材料科学
薄膜
电子迁移率
结晶学
有机化学
分子
纳米技术
物理化学
光电子学
电极
复合材料
作者
Bo Shao,He Yu,Tianzuo Wang,Dongsheng Yan,Yaofeng Yuan,Tian Du,Chunyan Chi,Yunfeng Deng,Yanhou Geng
标识
DOI:10.1002/macp.202300220
摘要
Abstract Driven by the success of quinoidal units for enabling high‐performance polymer semiconductors, herein a new quinoidal building block that terminated by indandione is reported. By introducing Br atoms into the terminal benzene rings of indandione, two CPs, P2TbTI‐DPP and P2TbTI‐TIID , are synthesized through Stille polycondensation. The strong electron‐withdrawing ability of indandione‐terminated quinoidal unit enables P2TbTI‐DPP and P2TbTI‐TIID with low‐lying LUMO energy levels of ≈–3.90 eV. Organic thin‐film transistors based on P2TbTI‐DPP and P2TbTI‐TIID exhibit n ‐type transport behavior. Besides, it is found that the electron mobility of these two polymers is weakly dependent on the annealing temperature due to the near‐amorphous of polymer thin‐film.
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