Effects of valence changes of iodine on perovskite (CH3NH3PbI3) Raman

In recent years, organic–inorganic hybrid perovskite materials have garnered extensive attention from scholars. Given its high absorption coefficient, carrier mobility, and diffusion length, it is widely studied for applications in various optoelectronic devices, such as solar cells, photodetectors, field-effect transistors, and light emitting diodes. Among them, the interfacial charge transfer process is a key factor influencing the performance of devices using perovskite materials. The charge transfer (CT) at the interface is typically detected via Raman spectroscopy. There are three types of related CT processes, namely, the interfacial ground state charge transfer, the photoinduced charge transfer resonance, and the electronic excitation resonance within the molecule itself. Among these factors, electronic excitation resonance manifests as an exciton resonance within the perovskite structure, providing energy for nearby charge transfer, thereby promoting charge transfer and enhancing Raman signals. Therefore, enhancing exciton resonance within the perovskite structure plays a crucial role in optoelectronic devices. This paper aimed to study the mechanism of oxygen plasma passivation of interstitial iodine defects and its enhancement effect on the Raman of perovskite substrates. Typically, interstitial iodine defects induce electron–hole recombination. In the process of oxygen plasma treatment, interstitial iodine is converted into pentavalent iodine, which can effectively fill related defects, inhibit electron–hole recombination, and prolong exciton lifetime, thereby promoting charge transfer and enhancing Raman intensity.