The application of silicon nitride in the MIS system†

Results are presented which show that silicon nitride deposited directly onto silicon is of limited value for use in MIS devices, mid that most of these limitations can be removed by using the nitride in sandwich structures with thermally grown oxides. Tn such structures the higher dielectric constant and passivating qualities of the nitride are of value, and the electrical properties of the silicon/silicon dioxide interface can be controlled by existing technology.