材料科学
锌
电子顺磁共振
光致发光
顺磁性
浅层供体
锗
兴奋剂
接受者
晶体缺陷
核磁共振
光电子学
凝聚态物理
硅
物理
冶金
作者
Scott D. Setzler,L. E. Halliburton,N. C. Giles,Peter G. Schunemann,T. M. Pollak
出处
期刊:MRS Proceedings
[Cambridge University Press]
日期:1996-01-01
卷期号:450
被引量:10
摘要
Electron paramagnetic resonance (EPR) has been used to monitor native defects, both acceptors and donors, in ZnGeP2 crystals grown by the horizontal gradient freeze technique. These active centers include singly ionized zinc vacancies (Vzn-), neutral phosphorus vacancies (VP0), and neutral phosphorus antisite defects (PGe0). The concentration of Vzn− acceptors correlates with the near-infrared optical absorption present in all ZnGeP2 crystals. A photoluminescence band near 1.4 eV is shown to be polarized and is attributed to donor-acceptor-pair (DAP) recombination. Preliminary time-decay measurements support this assignment. Observation of the EPR spectrum of Mn2+ is also reported.
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