Electric Fatigue in Metal/Ferroelectric Polymer/SiO2/p-Si Capacitors

In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. In this letter we report the observation of electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO2 layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO2/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.