空位缺陷
材料科学
兴奋剂
Atom(片上系统)
阳极
化学物理
离子键合
工作(物理)
电导率
离子电导率
纳米技术
离子
结晶学
光电子学
物理化学
热力学
化学
计算机科学
电解质
物理
嵌入式系统
有机化学
电极
作者
Gencai Guo,Siwei Luo,Chen Lai,Bangming Ming,Manqi You,Xiaolong Liu,Zongyu Huang,Xiaolin Wei,Ru-Zhi Wang,Jianxin Zhong
标识
DOI:10.1016/j.apsusc.2021.151330
摘要
Two-dimensional C3N has attracted various attention owing to its excellent electrical and mechanical properties. However, a critical issue is that the trap of Li, introduced by the vacancy defect during experimental preparation, will weaken the performance of the batteries. In this work, atom-doped regulation is proposed to repair the vacancy and further improve the performance of pristine C3N. The calculated formation energy indicates that C and B atoms are more favorable to appear as compared to other atoms such as Si, P, and N atom. Moreover, the Li ionic conductivity and the binding energy of Li on doped C3N are greatly improved compared to pristine C3N without the sacrifice of mechanical properties, and migration capability. These studies could provide theoretical guidance for the realization of high-performance C3N anode materials.
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