佩多:嘘
材料科学
紫外线
光电探测器
物理
光电子学
分析化学(期刊)
化学
纳米技术
图层(电子)
有机化学
作者
Anshika Srivastava,Satyabrata Jit,Shweta Tripathi
标识
DOI:10.1109/ted.2021.3077348
摘要
This work reports a Pd/Al 2 O 3 /ZnO/pentacene/ PEDOT:PSS/indium-doped tin oxide (ITO) structure-based high-performance ultraviolet (UV)-visible photodetector fabricated on an ITO substrate. The poly(3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT:PSS) acts as the hole transport layer (HTL), while aluminum oxide (Al 2 O 3 ) acts as a hole blocking layer (HBL) to reduce the dark current. At -1 V bias voltage, the proposed device shows the responsivity, sensitivity, detectivity, and external quantum efficiency (EQE) of 25.51 A/W, 2574.19, 1.52 ×10 16 Jones, and 10171% at 311 nm (UV region) while the corresponding values at 565 nm (visible region) are found to be 0.36 A/W, 346.66, 2.17 ×10 14 Jones, and 79.65%, respectively.
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