摩擦电效应
纳米发生器
肖特基势垒
材料科学
光电子学
灵敏度(控制系统)
电压
压电
肖特基二极管
电极
半导体
纳米技术
电气工程
电子工程
化学
复合材料
工程类
物理化学
二极管
作者
Luming Zhao,Hu Li,Jianping Meng,Yan Zhang,Hongqin Feng,Yuxiang Wu,Zhou Li
出处
期刊:Science Bulletin
[Elsevier BV]
日期:2021-07-01
卷期号:66 (14): 1409-1418
被引量:10
标识
DOI:10.1016/j.scib.2021.03.013
摘要
Schottky-contacted sensors have been demonstrated to show high sensitivity and fast response time in various sensing systems. In order to improve their sensing performance, the Schottky barriers height (SBH) at the interface of semiconductor and metal electrode should be adjusted to appropriate range to avoid low output or low sensitivity, which was induced by excessively high or low SBH, respectively. In this work, a simple and effective SBH tuning method by triboelectric generator (TENG) is proposed, the SBH can be effectively lowered by voltage pulses generated by TENG and gradually recover over time after withdrawing the TENG. Through combining the TENG treatment with piezotronic effect, a synergistic effect on lowering SBH was achieved. The change of SBH is increased by 3.8 to 12.8 times, compared with dependent TENG treatment and piezotronic effect, respectively. Furthermore, the recovery time of the TENG-lowered SBH can be greatly shortened from 1.5 h to 40 s by piezotronic effect. This work demonstrated a flexible and feasible SBH tuning method, which can be used to effectively improve the sensitivity of Schottky-contact sensor and sensing system. Our study also shows great potential in broadening the application scenarios of Schottky-contacted electronic devices.
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