暗电流
叠加原理
物理
晶体硅
异质结
光电子学
偏压
光学
硅
电流(流体)
太阳能电池
电压
光电探测器
量子力学
热力学
作者
Raghu Vamsi Krishna Chavali,J. R. Wilcox,Biswajit Ray,J.L. Gray,Muhammad A. Alam
标识
DOI:10.1109/jphotov.2014.2307171
摘要
a-Si/c-Si heterojunction solar cells exhibit several distinctive dark and light I-V non-ideal features.The dark I-V of these cells exhibits unusually high ideality factors at low forward bias and the occurrence of a 'knee' at medium forward bias.Nonidealities under illumination, such as the failure of superposition and the occurrence of an 'S-type' curve, are also reported in these cells.However, the origin of these non-idealities and how the dark I-V non-idealities manifest themselves under illumination, as well as vice versa, have not been clearly and consistently explained in the current literature.In this study, a numerical framework is used to interpret the origin of the dark I-V non-idealities and a novel simulation technique is developed to separate the photocurrent and the contact injection current components of the light I-V.Using this technique, the voltage dependence of photo-current is studied to explain the failure of the superposition principle and the origin of the S-type light I-V characteristics.The analysis provides a number of insights into the correlations between the dark I-V and the light I-V.Finally, using the experimental results from this study and from the current literature, it is shown that these non-ideal effects indeed affect the dark I-V and the light I-V in a predictable manner.
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