GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device

We observed a clear excitonic absorption effect at room temperature in MBE-grown Ga1−xInxAS/GaAs strained layer multiple quantum well structures, and fabricated optical pin modulators on the same structures. A change of 27% in the transmission, corresponding to a change in the absorption coefficient of 2260cm−1, with 6 V reverse bias voltage and at 9710 Å wavelength, was measured. We also operated the modulator as a self-electro-optic effect device, resulting in a nonlinear optical input/output characteristic.