SiC Device Technologies

Abstract Silicon carbide (SiC) devices have drawn considerable attention for use in various applications due to the interesting materials properties of SiC. Commercial products are now available for high‐voltage and high‐frequency applications. Prototype devices show promising performance, whereas materials issues are still a hinder for economically viable production of large‐area devices with high yield. This article reviews the more recent progress in SiC devices and process technology and presents the state‐of‐the‐art SiC devices as well as new application areas such as ferroelectric field‐effect transistors (FeFETs).